MURTA30060
GeneSiC Semiconductor
Deutsch
Artikelnummer: | MURTA30060 |
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Hersteller / Marke: | GeneSiC Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 600V 150A 3 TOWER |
Datenblätte: |
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RoHs Status: | RoHS-konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
48+ | $159.9075 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 150 A |
Spannung - Sperr (Vr) (max) | 600 V |
Technologie | Standard |
Supplier Device-Gehäuse | Three Tower |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Serie | - |
Verpackung / Gehäuse | Three Tower |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Bulk |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Chassis Mount |
Diodenkonfiguration | 1 Pair Common Cathode |
Strom - Sperrleckstrom @ Vr | 25 µA @ 600 V |
Strom - Richt (Io) (pro Diode) | 150A |
MURTA30060 Einzelheiten PDF [English] | MURTA30060 PDF - EN.pdf |
DIODE GEN PURP 600V 100A 3 TOWER
DIODE GEN PURP 600V 150A 3 TOWER
DIODE GEN PURP 600V 200A 3 TOWER
DIODE GEN PURP 600V 150A 3 TOWER
DIODE GEN PURP 200V 150A 3 TOWER
DIODE GEN PURP 400V 150A 3 TOWER
DIODE GEN PURP 400V 200A 3 TOWER
DIODE GEN PURP 200V 200A 3 TOWER
DIODE GEN PURP 600V 150A 3 TOWER
DIODE GEN PURP 200V 150A 3 TOWER
DIODE GEN PURP 400V 200A 3 TOWER
DIODE GEN PURP 600V 100A 3 TOWER
DIODE GEN PURP 400V 150A 3 TOWER
DIODE GEN PURP 400V 100A 3 TOWER
DIODE GEN PURP 200V 200A 3 TOWER
DIODE GEN PURP 600V 200A 3 TOWER
DIODE GEN PURP 400V 100A 3 TOWER
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![]() MURTA30060GeneSiC Semiconductor |
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